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卷 54, 编号 2 (2025)
Effect of boundary roughness on the variability of the I-V data of silicon field-effect GAA nanotransistors
Masalsky N.
PDF
(Rus)
卷 54, 编号 1 (2025)
AZ nLOF series photoresist films on monocrystalline silicon
Brinkevich D., Grinyuk E., Prosolovich V., Zubova O., Kolos V., Brinkevich S., Vabishchevich S.
PDF
(Rus)
卷 52, 编号 1 (2023)
Controlling Silicon Etching Parameters in RF CHF3 Plasma by Optical Emission Spectroscopy
Murin D., Chesnokov I., Pivovarenok S., Efremov A.
PDF
(Rus)
卷 52, 编号 4 (2023)
Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric
Masalskii N.
PDF
(Rus)
卷 53, 编号 2 (2024)
Temporary changes in current flow mechanisms in erbium-doped porous silicon
Khamzin E., Uslin D.
PDF
(Rus)
卷 53, 编号 2 (2024)
Influence of nickel impurities on the operational parameters of a silicon solar cell
Kenzhaev Z., Zikrillaev N., Odzhaev V., Ismailov K., Prosolovich V., Zikrillaev K., Koveshnikov S.
PDF
(Rus)
卷 53, 编号 2 (2024)
Structural features and electrical properties of si(al) thermal migration channels for high-voltage photovoltaic converters
Lomov A., Seredin B., Martyushov S., Tatarintsev A., Popov V., Malibashev A.
PDF
(Rus)
卷 53, 编号 3 (2024)
Simulation of silicon conical field effect GAA nanotransistors with stack SiO2/HfO2 dielectric of gate
Masalsky N.
PDF
(Rus)
卷 53, 编号 4 (2024)
Al Islands on Si(111): Growth Temperature, Morphology and Strain
Lomov A., Zakharov D., Tarasov M., Chekushkin A., Tatarintsev A., Vasiliev A.
PDF
(Rus)
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